21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T4eb,We report the experimental demonstration of deep-submicrometer inversion-mode In _0.75 Ga _0.25 As MOSFETs with ALD high- k Al ₂ O ₃ as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 muA/mum and transconductances of 538-705 muS/mum. The 100-nm device has a drain current of 801 muA/mum and a transconductance of 940 muS/mum. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.

#	Concept	H-Index	Publications	Citations
1	Engineering	1	1	93
2	Applied Physics	1	1	93
3	Physics	1	1	93
4	Condensed Matter Physics	1	1	93
5	Microelectronics	1	1	93

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