J. M. Hong - Concepedia

Author

J. M. Hong

National Tsing Hua University

Also Known As

J. M. Hong, J. Minghuang Hong, J.M. Hong, Jason Hong, Jintao Hong

Publications

403

Citations

H-Index

Concepts

All Affiliations

National Tsing Hua University AU Optronics (Taiwan)National Synchrotron Radiation Research Center National Yang Ming Chiao Tung University Industrial Technology Research Institute

About

J. M. Hong is an author at National Tsing Hua University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	384
2	Applied Physics	9	9	384
3	Electrical Engineering	5	5	227
4	Materials Science	5	5	254
5	Materials Engineering	4	4	167

J. M. Hong

Publications

394

Citations

H-Index

Page 1

	Year	Citations
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer Chia-Pei Lin, Ming Feng, J. D. Guo, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringThermal TreatmentEngineering	1996	65
Nanometer‐Thick Single‐Crystal Hexagonal Gd<sub>2</sub>O<sub>3</sub> on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology Wen-Hsin Chang, Chih Hsun Lee, Yao Chang, Advanced Materials Materials ScienceOxide HeterostructuresSemiconductorsDielectric ConstantEngineering	2009	62
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric Yen‐Chung Chang, Wen-Hsin Chang, H. C. Chiu, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringMos CapacitorEngineering	2008	60
Transport critical current density and microstructure in extruded YBa2Cu3O7−<i>x</i> wires processed by zone melting Donglu Shi, H. Krishnan, J. M. Hong, Journal of Applied Physics Superconducting MaterialMagnetic PropertiesEngineeringZone MeltingSintered Wires	1990	57
High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties Wen-Hsin Chang, Chih‐Hao Lee, Pei-Ching Chang, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2008	51
Growth and characterizations of GaN on SiC substrates with buffer layers C. F. Lin, Hao Cheng, Ming Feng, Journal of Applied Physics Materials EngineeringOxide HeterostructuresElectrical EngineeringSemiconductorsEngineering	1997	32
Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric Y. C. Chang, Wen-Hsin Chang, Yu‐Han Chang, Microelectronic Engineering Electrical EngineeringEngineeringApplied PhysicsGan MosfetsGan Power Device	2010	19
Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN Wen-Hsin Chang, Pei-Ching Chang, W.C. Lee, Journal of Crystal Growth Materials EngineeringY2o3 FilmsEpitaxial StabilizationEpitaxial GrowthEngineering	2010	19
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth Yang-Hua Chang, H. C. Chiu, Wen-Hsin Chang, Journal of Crystal Growth Materials ScienceEngineeringMolecular Beam Epitaxy-al2o3Applied PhysicsAluminum Gallium Nitride	2008	19
Superconducting properties of a liquid-infiltration Nb-Nb3Sn composite formed during a low-temperature reaction M. Hong, G. W. Hull, J. T. Holthuis, Applied Physics Letters	1983	10

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