J. M. Hong

The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer

Chia-Pei Lin, Ming Feng, J. D. Guo et al. · Applied Physics Letters · 1996 · 65 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Nanometer‐Thick Single‐Crystal Hexagonal Gd₂O₃ on GaN for Advanced Complementary Metal‐Oxide‐Semiconductor Technology

Wen-Hsin Chang, Chih Hsun Lee, Yao Chang et al. · Advanced Materials · 2009 · 62 citations

Materials Science, Oxide Heterostructures, Semiconductors +14

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Yen‐Chung Chang, Wen-Hsin Chang, H. C. Chiu et al. · Applied Physics Letters · 2008 · 60 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Transport critical current density and microstructure in extruded YBa2Cu3O7−<i>x</i> wires processed by zone melting

Donglu Shi, H. Krishnan, J. M. Hong et al. · Journal of Applied Physics · 1990 · 57 citations

Superconducting Material, Magnetic Properties, Engineering +16

High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

Wen-Hsin Chang, Chih‐Hao Lee, Pei-Ching Chang et al. · Journal of Crystal Growth · 2008 · 51 citations

Materials Science, Materials Engineering, Electrical Engineering +6