L. T. Tung

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

T. D. Lin, H. C. Chiu, Pei-Ching Chang et al. · Applied Physics Letters · 2008 · 126 citations

Semiconductor Technology, Gate Dielectrics, Electrical Engineering +8

Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

H. C. Chiu, L. T. Tung, Yizhe Chang et al. · Applied Physics Letters · 2008 · 61 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +19

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Yen‐Chung Chang, Wen-Hsin Chang, H. C. Chiu et al. · Applied Physics Letters · 2008 · 60 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

1 nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

K. H. Shiu, T. H. Chiang, P. Chang et al. · Applied Physics Letters · 2008 · 50 citations

Materials Engineering, Oxide Heterostructures, Electrical Engineering +14

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Li‐Kang Chu, W.C. Lee, Mao Lin Huang et al. · Journal of Crystal Growth · 2008 · 46 citations

Oxide Electronics, Applied Physics, Gallium Oxide +2