In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

Abstract

The paper demonstrates properties of metal oxide semiconductor capacitors fabricated on molecular beam epitaxial In0.53Ga0.47As wafers with the atomic layer deposition ZrO2 gate oxide. The equivalent oxide thickness of 0.8nm was obtained for 5nm thick ZrO2, while the gate leakage current density at VFB+1V was as low as 0.1A∕cm2. Sensitivity of capacitance-voltage characteristics to the metal gate work function along with low frequency dispersion of ∼5%/decade served as a strong evidence of a nonpinned Fermi level at the oxide-InGaAs interface. Both electrical and structural properties remain stable up to 800°C.