Feng Zhu - Concepedia

Author

Feng Zhu

The University of Texas at Austin ORCID

Also Known As

F ZHU, F. Zhu, FENG ZHU, Feihong Zhu, Feng Jun Zhu, Feng Zhu, Fuyin Zhu, Miller, E., Zhu, Feng

175

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

The University of Texas at Austin Peking University Intel (United States)University at Albany, State University of New York University of Oklahoma

About

Feng Zhu is an author at The University of Texas at Austin specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	46	1.6K
2	Applied Physics	21	38	1.3K
3	Chemistry	4	4	312
4	Natural Sciences	2	2	30
5	Medicine	1	1	15

Feng Zhu

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Shape Evolution and Single Particle Luminescence of Organometal Halide Perovskite Nanocrystals Feng Zhu, Long Men, Yijun Guo, ACS Nano EngineeringHalide PerovskitesOptoelectronic DevicesOrganometallic HalideChemistry	2015	270
Power quality disturbance identification using wavelet packet energy entropy and weighted support vector machines Guo‐Hua Hu, Feng Zhu, Zhongjie Ren Expert Systems with Applications Condition MonitoringEngineeringData ScienceEnergy ManagementSmart Grid	2007	106
Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer Hyoung-sub Kim, Manhong Zhang, Chang-Yong Kang, IEEE Electron Device Letters EngineeringMos StructuresGaas SubstrateSilicon On InsulatorPost-deposition Anneal	2006	81
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon S. Oktyabrsky, Vadim Tokranov, Michail M. Yakimov, Materials Science and Engineering B Electrical EngineeringEngineeringApplied PhysicsSitu PassivationAmorphous Silicon	2006	75
In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm S. Koveshnikov, N. Goel, P. Majhi, Applied Physics Letters Thick Zro2EngineeringLow Frequency DispersionSemiconductor DeviceLow Gate Leakage	2008	72
Unveiling the Photo‐ and Thermal‐Stability of Cesium Lead Halide Perovskite Nanocrystals Brett W. Boote, Himashi P. Andaraarachchi, Bryan A. Rosales, ChemPhysChem	2019	69
Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation Hyoung-Sub Kim, Injo Ok, Manhong Zhang, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringUltrathin Hfo2Thin Germanium	2006	62
Microstructural control of maraging steel C300 Feng Zhu, Y. F. Yin, R. G. Faulkner Materials Science and Technology Materials ScienceEngineeringHigh Temperature MaterialsAging Temperature RangeMechanical Engineering	2010	57
Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer Injo Ok, H. Kim, M. Zhang, Applied Physics Letters Electrical EngineeringMaterial CharacteristicsEngineeringGood Transistor BehaviorBias Temperature Instability	2008	53
Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers Hyoung-Sub Kim, Injo Ok, Manhong Zhang, Applied Physics Letters SemiconductorsSilicon/germanium IplsElectrical EngineeringSemiconductor TechnologyEngineering	2006	51

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