Manhong Zhang

Investigation of resistive switching in Cu-doped HfO₂thin film for multilevel non-volatile memory applications

Yan Wang, Qi Liu, Shibing Long et al. · Nanotechnology · 2009 · 304 citations

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

Yingtao Li, Shibing Long, Manhong Zhang et al. · IEEE Electron Device Letters · 2009 · 160 citations

Materials Engineering, Non-volatile Memory, Electrical Engineering +12

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

Qi Liu, Chunmeng Dou, Yan Wang et al. · Applied Physics Letters · 2009 · 117 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer

Chenxin Zhu, Zongliang Huo, Zhongguang Xu et al. · Applied Physics Letters · 2010 · 87 citations

High-κ Trapping Layer, Non-volatile Memory, Electrical Engineering +15

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

Hyoung-sub Kim, Manhong Zhang, Chang-Yong Kang et al. · IEEE Electron Device Letters · 2006 · 81 citations

Engineering, Mos Structures, Gaas Substrate +16