Zongliang Huo

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Qi Liu, Shibing Long, Hangbing Lv et al. · ACS Nano · 2010 · 462 citations

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Haitao Sun, Qi Liu, Congfei Li et al. · Advanced Functional Materials · 2014 · 319 citations

Engineering, Emerging Memory Technology, Phase Change Memory +21

Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer

Chenxin Zhu, Zongliang Huo, Zhongguang Xu et al. · Applied Physics Letters · 2010 · 87 citations

High-κ Trapping Layer, Non-volatile Memory, Electrical Engineering +15

Highly Stable Radiation-Hardened Resistive-Switching Memory

Yan Wang, Hangbing Lv, Wei Wang et al. · IEEE Electron Device Letters · 2010 · 80 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

In situ electron holography study of charge distribution in high-κ charge-trapping memory

Yuan Yao, Chao Li, Zongliang Huo et al. · Nature Communications · 2013 · 70 citations · Full text

Charge Excitations, High-κ Charge-trapping Memory, Engineering +8