Hangbing Lv

Recommended Methods to Study Resistive Switching Devices

Mario Lanza, H.‐S. Philip Wong, Eric Pop et al. · Advanced Electronic Materials · 2018 · 650 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

Qi Liu, Jun Sun, Hangbing Lv et al. · Advanced Materials · 2012 · 584 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Qi Liu, Shibing Long, Hangbing Lv et al. · ACS Nano · 2010 · 467 citations

Natural Sciences, Electrical Engineering, Materials Engineering +17

An Artificial Neuron Based on a Threshold Switching Memristor

Xumeng Zhang, Wei Wang, Qi Liu et al. · IEEE Electron Device Letters · 2017 · 396 citations

Engineering, Computer Science, Electrical Engineering +13

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Haitao Sun, Qi Liu, Congfei Li et al. · Advanced Functional Materials · 2014 · 320 citations

Engineering, Materials Engineering, Materials Science +17