Concepedia

Hangbing Lv

HL

132

Publications

9.6K

Citations

53

H-Index

2007

Active since

Affiliations

Chinese Academy of Sciences(Current)

Institute of Microelectronics

University of Chinese Academy of Sciences

The Synergetic Innovation Center for Advanced Materials

Fudan University

Hangbing Lv is an author at Chinese Academy of Sciences specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsComputer EngineeringMaterial ScienceResistive Random-access MemoryNanoelectronicsComputer ArchitectureMemory Devices

Publications per year

2007–2023

132

Publications

132

Recommended Methods to Study Resistive Switching Devices

Mario Lanza, H.‐S. Philip Wong, Eric Pop et al. · Advanced Electronic Materials · 2018 · 632 citations · Full text

Engineering, Power Electronics, Phase Change Memory +18

Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

Qi Liu, Jun Sun, Hangbing Lv et al. · Advanced Materials · 2012 · 578 citations

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

Qi Liu, Shibing Long, Hangbing Lv et al. · ACS Nano · 2010 · 462 citations

An Artificial Neuron Based on a Threshold Switching Memristor

Xumeng Zhang, Wei Wang, Qi Liu et al. · IEEE Electron Device Letters · 2017 · 378 citations

Electrical Engineering, Synaptic Plasticity, Engineering +15

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Haitao Sun, Qi Liu, Congfei Li et al. · Advanced Functional Materials · 2014 · 319 citations

Engineering, Emerging Memory Technology, Phase Change Memory +21

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