Hangbing Lv - Concepedia

Author

Hangbing Lv

Chinese Academy of Sciences

Also Known As

H. B. Lv, H. Lv, H.B. Lv, Haihui Lv, Haiyang Lv, Han-Jia Lv, Hang-Bing Lv, HangBing LV, HangBing Lv, Hangbing LV

221

Publications

10.1K

Citations

H-Index

133

Concepts

All Affiliations

Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences The Synergetic Innovation Center for Advanced Materials Fudan University

About

Hangbing Lv is an author at Chinese Academy of Sciences specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	45	99	6.2K
2	Applied Physics	41	73	4.9K
3	Social Sciences	7	7	745
4	Natural Sciences	1	1	203
5	Biomedical Engineering	1	1	14

Hangbing Lv

132

Publications

9.6K

Citations

H-Index

Page 1

	Year	Citations
Recommended Methods to Study Resistive Switching Devices Mario Lanza, H.‐S. Philip Wong, Eric Pop, Advanced Electronic Materials EngineeringPower ElectronicsPhase Change MemoryRs TechnologyElectronic Devices	2018	632
Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM Qi Liu, Jun Sun, Hangbing Lv, Advanced Materials	2012	578
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode Qi Liu, Shibing Long, Hangbing Lv, ACS Nano	2010	462
An Artificial Neuron Based on a Threshold Switching Memristor Xumeng Zhang, Wei Wang, Qi Liu, IEEE Electron Device Letters Electrical EngineeringSynaptic PlasticityEngineeringComputational NeuroscienceArtificial Synapses	2017	378
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology Haitao Sun, Qi Liu, Congfei Li, Advanced Functional Materials EngineeringEmerging Memory TechnologyPhase Change MemoryConductive Filament MorphologyElectronic Devices	2014	319
A highly CMOS compatible hafnia-based ferroelectric diode Qing Luo, Yan Cheng, Jianguo Yang, Nature Communications	2020	273
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging Ying Zhang, Ge‐Qi Mao, Xiaolong Zhao, Nature Communications	2021	260
Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory Sen Liu, Nianduan Lu, Xiaolong Zhao, Advanced Materials	2016	232
Effects of Capping Electrode on Ferroelectric Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Rongrong Cao, Yan Wang, Shengjie Zhao, IEEE Electron Device Letters Thin Film PhysicsEngineeringThin Film Process TechnologyW TeFerroelectric Application	2018	203
Reproducible unipolar resistance switching in stoichiometric ZrO2 films Xiaojing Wu, Peng Zhou, Jing Li, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringIi-vi SemiconductorEngineering	2007	177

Page 1