R. Kambhampati

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 99 citations

Engineering, Computer Engineering, Electrical Engineering +17

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, N. Goel, P. Majhi et al. · Applied Physics Letters · 2008 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Channel doping impact on FinFETs for 22nm and beyond

C.-H. Lin, R. Kambhampati, Robert J. Miller et al. · 2012 · 67 citations

Engineering, Electrical Engineering, Electronic Materials +14

A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs

T. Yamashita, S. Mehta, Veeraraghavan Basker et al. · 2015 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide

S. Koveshnikov, Cristina B. Adamo, Vadim Tokranov et al. · Applied Physics Letters · 2008 · 17 citations

Engineering, Materials Engineering, Materials Science +17