T. Yamashita

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 939 citations

Engineering, Nanocomputing, Semiconductor Device +17

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J. Zhang, Julien Frougier, Andrew Greene et al. · 2019 · 93 citations

Engineering, Semiconductor Device, Advanced Packaging (Semiconductors) +17

Channel doping impact on FinFETs for 22nm and beyond

C.-H. Lin, R. Kambhampati, Robert J. Miller et al. · 2012 · 66 citations

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 64 citations

Engineering, Vlsi Design, Device Integration +16