T. Yamashita

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J. Zhang, Julien Frougier, Andrew Greene et al. · 2019 · 97 citations

Engineering, Electrical Engineering, Materials Science +17

Channel doping impact on FinFETs for 22nm and beyond

C.-H. Lin, R. Kambhampati, Robert J. Miller et al. · 2012 · 67 citations

Engineering, Electrical Engineering, Electronic Materials +14

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +14