C. Huffman - Concepedia

Author

C. Huffman

Texas Instruments (United States)

Also Known As

C. Huffman, Courtenay Huffman, Craig H. Huffman, Craig Huffman

Publications

821

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)Advanced Micro Devices (United States)Intel (United States)IBM Research - Austin Infineon Technologies (Germany)

About

C. Huffman is an author at Texas Instruments (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	624
2	Applied Physics	15	16	573
3	Electrical Engineering	13	14	423
4	Chemistry	2	2	112
5	Chemical Engineering	1	1	99

C. Huffman

Publications

715

Citations

H-Index

Page 1

	Year	Citations
Selectivity in Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions Young‐Hee Lee, C. Huffman, Steven M. George Chemistry of Materials EngineeringSelf-limiting FluorinationChemistryAtomic LayerChemical Engineering	2016	99
Controlled Layer-by-Layer Etching of MoS<sub>2</sub> TaiZhe Lin, Baotao Kang, Minhwan Jeon, ACS Applied Materials & Interfaces	2015	91
Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility Wenjing Xiong, C. Rinn Cleavelin, Puneet Kohli, IEEE Electron Device Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringNmos Finfet Mobility	2006	69
Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) B.H. Lee, Chadwin D. Young, Rino Choi, EngineeringPower ElectronicsCharge TransportFast TransientNanoelectronics	2005	54
Growth mechanism of TiN film on dielectric films and the effects on the work function K. Choi, Patrick Lysaght, Husam N. Alshareef, Thin Solid Films Materials EngineeringMaterials ScienceMaterial AnalysisDielectric FilmsEngineering	2005	40
Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process Zhibo Zhang, S. C. Song, C. Huffman, Electrochemical and Solid-State Letters Materials ScienceElectrical EngineeringEngineeringNanoelectronicsOxide Electronics	2005	39
Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric Husam N. Alshareef, H. R. Harris, H.C. Wen, SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2006	38
Carbonized layer formation in ion implanted photoresist masks Kevin J. Orvek, C. Huffman Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringElectron-beam LithographyBeam Lithography	1985	38
Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration Sook‐Keun Song, Z.B. Zhang, M. Mahmood Hussain, Low-power ElectronicsElectrical EngineeringEngineeringDual High-kNanoelectronics	2006	35
High performance gate first HfSiON dielectric satisfying 45nm node requirements Manuel Quevedo-López, Bruce E. Gnade, M.J. Kim, Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringRf Semiconductor	2005	33

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