C. Huffman

Selectivity in Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions

Young‐Hee Lee, C. Huffman, Steven M. George · Chemistry of Materials · 2016 · 99 citations

Engineering, Self-limiting Fluorination, Chemistry +19

Controlled Layer-by-Layer Etching of MoS₂

TaiZhe Lin, Baotao Kang, Minhwan Jeon et al. · ACS Applied Materials & Interfaces · 2015 · 91 citations

Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility

Wenjing Xiong, C. Rinn Cleavelin, Puneet Kohli et al. · IEEE Electron Device Letters · 2006 · 69 citations

Materials Science, Semiconductor Technology, Electrical Engineering +15

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

B.H. Lee, Chadwin D. Young, Rino Choi et al. · 2005 · 54 citations

Engineering, Power Electronics, Charge Transport +18

Growth mechanism of TiN film on dielectric films and the effects on the work function

K. Choi, Patrick Lysaght, Husam N. Alshareef et al. · Thin Solid Films · 2005 · 40 citations

Materials Engineering, Materials Science, Material Analysis +9