Growth mechanism of TiN film on dielectric films and the effects on the work function

Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing

H. Kim · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 541 citations

Natural Sciences, Materials Engineering, Materials Science +17

Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

Yee‐Chia Yeo, Tsu-Jae King, Chenming Hu · Journal of Applied Physics · 2002 · 424 citations

Engineering, Electrical Engineering, Materials Science +17

High-resolution work function imaging of single grains of semiconductor surfaces

Sascha Sadewasser, Thilo Glatzel, Marin Rusu et al. · Applied Physics Letters · 2002 · 157 citations

Natural Sciences, Materials Engineering, Materials Science +17

On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

Jörgen Westlinder, T. Schram, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in<tex>$hbox TaN/SiO_2$</tex>Gate Stack

C. Ren, H.Y. Yu, Jinfeng Kang et al. · IEEE Electron Device Letters · 2004 · 56 citations

Engineering, Electrical Engineering, Materials Science +17