V. Kaushik - Concepedia

Author

V. Kaushik

Motorola (United States)

Also Known As

V Kaushik, V S Kaushik, V. KAUSHIK, V. Kaushik, V. S. KAUSHIK, V. S. Kaushik, V.S. Kaushik, Vani Kaushik, Varun Kaushik

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)IMEC KU Leuven All India Institute of Medical Sciences Sandia National Laboratories

About

V. Kaushik is an author at Motorola (United States) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	920
2	Applied Physics	15	21	920
3	Medicine	3	3	84
4	Health Sciences	2	2	36
5	Anesthesia	1	1	24

V. Kaushik

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
The electronic conduction mechanism in barium strontium titanate thin films Sufi Zafar, Robert E. Jones, Bo Jiang, Applied Physics Letters Materials ScienceElectrical EngineeringSchottky Emission EquationEngineeringBarium Strontium Titanate	1998	170
Epitaxial oxide thin films on Si(001) Zhiyi Yu, J. Ramdani, J. Curless, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceOxide HeterostructuresElectrical EngineeringEpitaxial GrowthEngineering	2000	113
(Ba,Sr)TiO 3 thin films with conducting perovskite electrodes for dynamic random access memory applications B. Nagaraj, T. Sawhney, S. R. Perusse, Applied Physics Letters Materials ScienceElectrical EngineeringDielectric ConstantEngineeringPerovskite Solar Cell	1999	76
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy Zhiyi Yu, J. Ramdani, J. Curless, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceMaterials EngineeringOxide HeterostructuresEngineeringPerovskite Solar Cell	2000	73
Estimation of fixed charge densities in hafnium-silicate gate dielectrics V. Kaushik, Barry O’Sullivan, Geoffrey Pourtois, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringWafer Scale ProcessingEngineeringFixed Charge Densities	2006	67
Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics Dina H. Triyoso, R. I. Hegde, J. K. Schaeffer, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSemiconductor DeviceEngineeringCrystalline DefectsZr Addition	2007	53
Abnormal regional metabolism and mechanical function in patients with ischemic heart diseases: improvement after successful regional revascularization by aortocoronary bypass. Kanu Chatterjee, Jack M. Matloff, H. J. C. Swan, Circulation Vascular DiseaseHeart FailureCardiac AnaesthesiaWall MetabolismSuccessful Regional Revascularization	1975	48
Asymmetric tilt boundaries and generalized heteroepitaxy Brian W. Dodson, David R. Myers, Abhaya K. Datye, Physical Review Letters Materials ScienceSemiconductorsEpitaxial GrowthEngineeringDislocation Interaction	1988	46
300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (X<inf>j</inf>&#x223C;5nm) formed with molecular monolayer doping technique K.-W. Ang, Joel Barnett, W.Y. Loh, Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	2011	46
Immediate Circulatory Response to High Altitude Hypoxia in Man Sujoy B. Roy, J S Guleria, P K Khanna, Nature High Altitude HypoxiaPhysiologyHypoxia (Medicine)	1968	38

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