Andrea Padovani - Concepedia

Author

Andrea Padovani

University of Modena and Reggio Emilia ORCID

Also Known As

A. PADOVANI, A. Padovani, ANDREA PADOVANI, ANDRÉA SANDOVAL PADOVANI, Andrea Padovani, Andréa Sandoval Padovani, Miller, Fred D, PADOVANI, ANDREA, PADOVANI, Andrea, Padovani, A.

299

Publications

6.1K

Citations

H-Index

100

Concepts

All Affiliations

University of Modena and Reggio Emilia Ferrari (Italy)Molsoft (United States)Singapore University of Technology and Design University College London

About

Andrea Padovani is an author at University of Modena and Reggio Emilia specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	33	89	5.5K
2	Applied Physics	32	81	5.3K
3	Natural Sciences	4	4	124
4	Social Sciences	2	2	106
5	Chemistry	1	1	25

Andrea Padovani

101

Publications

5.7K

Citations

H-Index

Page 1

	Year	Citations
Physical Mechanisms behind the Field‐Cycling Behavior of HfO<sub>2</sub>‐Based Ferroelectric Capacitors Milan Pešić, Franz P. G. Fengler, Luca Larcher, Advanced Functional Materials Materials ScienceMultiferroicsEngineeringPhysicsCrystalline Defects	2016	866
Recommended Methods to Study Resistive Switching Devices Mario Lanza, H.‐S. Philip Wong, Eric Pop, Advanced Electronic Materials EngineeringPower ElectronicsPhase Change MemoryRs TechnologyElectronic Devices	2018	632
Metal oxide resistive memory switching mechanism based on conductive filament properties G. Bersuker, D. C. Gilmer, Dmitry Veksler, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringTunneling Microscopy	2011	468
A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks Luca Vandelli, Andrea Padovani, Luca Larcher, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringPhysicsCrystalline Defects	2011	256
Microscopic Modeling of HfO<sub><italic>x</italic></sub> RRAM Operations: From Forming to Switching Andrea Padovani, Luca Larcher, Onofrio Pirrotta, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringDielectric ThicknessEngineeringPhysics	2015	209
Grain boundary-driven leakage path formation in HfO2 dielectrics G. Bersuker, J. Yum, Luca Vandelli, Solid-State Electronics EngineeringPhysicsApplied PhysicsTime-dependent Dielectric BreakdownDefect Formation	2011	143
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G. Bersuker, D. C. Gilmer, Dekel Veksler, Materials ScienceMaterials EngineeringElectrical EngineeringHigh Temperature MaterialsEngineering	2010	121
A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling Andrea Padovani, David Gao, Alexander L. Shluger, Journal of Applied Physics EngineeringSilicon On InsulatorSio2 FilmsSemiconductorsNanoelectronics	2017	120
A Complete Statistical Investigation of RTN in HfO<sub>2</sub>-Based RRAM in High Resistive State Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPhysicsRtn Current FluctuationsNanoelectronics	2015	115
Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries Onofrio Pirrotta, Luca Larcher, Mario Lanza, Journal of Applied Physics EngineeringCafm ExperimentsVacuum DevicePoly-crystalline Hfo2Charge Transport	2013	101

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