Concepedia

Dual-metal gate CMOS with HfO/sub 2/ gate dielectric

S. Samavedam, L.B. La, James A. Smith, S. Dakshina-Murthy, E. Luckowski, J. Schaeffer, R. Martín, V. Dhandapani, Dina H. Triyoso, H.‐H. Tseng,

2003 · 37 citations · 6 references

DOI

Concepts

Abstract

We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/ gate dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single metal integration, the dual-metal integration does not degrade gate leakage, mobility and charge trapping behavior. Promising preliminary TDDB data were obtained from dual-metal gate MOSFETs, while still delivering much improved gate leakage (10/sup 4/ - 10/sup 5/ X better than SiO/sub 2/).

References

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A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

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Dual-metal gate technology for deep-submicron CMOS transistors

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Metal gates for advanced sub-80-nm SOI CMOS technology

Baolei Cheng, B. Maiti, S. Samavedam et al. · 2002 · 31 citations

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