Christian Strenger

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Viktoryia Uhnevionak, A. Burenkov, Christian Strenger et al. · IEEE Transactions on Electron Devices · 2015 · 84 citations · Full text

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Guillermo P. Ortiz, Christian Strenger, Viktoryia Uhnevionak et al. · Applied Physics Letters · 2015 · 31 citations · Full text

Semiconductor Technology, Electrical Engineering, Electronic Devices +13

Benefits of new CoolSiCTM MOSFET in HybridPACKTM Drive package for electrical drive train applications.

Waldemar Jakobi, Andre Uhlemann, M. Thoben et al. · 2018 · 19 citations

Sic Mosfet, Electrical Engineering, Engineering +12

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC

Z. Ouennoughi, Christian Strenger, F. Bourouba et al. · Microelectronics Reliability · 2013 · 16 citations

Materials Engineering, Materials Science, Electrical Engineering +8

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

Christian Strenger, Volker Haeublein, Tobias Erlbacher et al. · Materials science forum · 2012 · 11 citations

Materials Science, Materials Engineering, Electrical Engineering +15