T. Hornos

The mechanism of defect creation and passivation at the SiC/SiO₂interface

Péter Deák, Jan M. Knaup, T. Hornos et al. · Journal of Physics D Applied Physics · 2007 · 166 citations

Engineering, Materials Engineering, Materials Science +17

Hyperfine coupling of point defects in semiconductors by hybrid density functional calculations: The role of core spin polarization

Krisztián Szász, T. Hornos, Martijn Marsman et al. · Physical Review B · 2013 · 112 citations · Full text

Natural Sciences, Materials Science, Physics +17

Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional

T. Hornos, Ádám Gali, B. G. Svensson · Materials science forum · 2011 · 106 citations · Full text

Natural Sciences, Materials Science, Physics +17

Negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>U</mml:mi></mml:math>carbon vacancy in 4<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>H</mml:mi></mml:math>-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site

Xuan Thang Trinh, Krisztián Szász, T. Hornos et al. · Physical Review B · 2013 · 51 citations · Full text

Natural Sciences, Materials Science, Physics +16

<i>Ab initio</i>supercell calculations on aluminum-related defects in SiC

Ádám Gali, T. Hornos, Nguyên Tiên Són et al. · Physical Review B · 2007 · 24 citations

Natural Sciences, Materials Science, Physics +17