Péter Deák

Accurate defect levels obtained from the HSE06 range-separated hybrid functional

Péter Deák, Bálint Aradi, Thomas Frauenheim et al. · Physical Review B · 2010 · 397 citations · Full text

Semiconductors, Defect Levels, Electrical Engineering +15

Role of oxygen vacancy defect states in the <i>n</i>-type conduction of β-Ga2O3

Z. Hajnal, József Miró, G. Kiss et al. · Journal of Applied Physics · 1999 · 230 citations · Full text

Oxygen Vacancies, Engineering, Solid-state Chemistry +16

Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects

Péter Deák, Bálint Aradi, Moloud Kaviani et al. · Physical Review B · 2014 · 224 citations

Categoryquantum Electronics, Engineering, Nv Centers +21

Siloxene: Chemical quantum confinement due to oxygen in a silicon matrix

Péter Deák, M. Rosenbauer, M. Stutzmann et al. · Physical Review Letters · 1992 · 187 citations

Optical Materials, Engineering, Siloxene Support +24

Porous silicon and siloxene: Vibrational and structural properties

H. D. Fuchs, M. Stutzmann, Martin S. Brandt et al. · Physical review. B, Condensed matter · 1993 · 185 citations

Optical Materials, Engineering, Nanoporous Material +17