Anton J. Bauer - Concepedia

Author

Anton J. Bauer

Fraunhofer Institute for Integrated Systems and Device Technology

Also Known As

A Bauer, A J Bauer, A. Bauer, A. J. Bauer, A.J Bauer, A.J. BAUER, A.J. Bauer, A. J. Bauer, Anton Bauer, Anton J. Bauer

322

Publications

2.7K

Citations

H-Index

105

Concepts

All Affiliations

Fraunhofer Institute for Integrated Systems and Device Technology Schott (Germany)Friedrich-Alexander-Universität Erlangen-Nürnberg Georgi Nadjakov Institute of Solid State Physics Bulgarian Academy of Sciences

About

Anton J. Bauer is an author at Fraunhofer Institute for Integrated Systems and Device Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	76	2K
2	Applied Physics	25	64	1.7K
3	Natural Sciences	3	3	64
4	Management	1	1	11
5	Biomedical Engineering	1	1	10

Anton J. Bauer

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics V. Yanev, Mathias Rommel, M. Lemberger, Applied Physics Letters EngineeringMicroscopyTuna Current MapsCurrent DensitiesSensitive Mapping Tool	2008	85
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs Viktoryia Uhnevionak, A. Burenkov, Christian Strenger, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2015	84
Different current conduction mechanisms through thin high-<i>k</i> HfxTiySizO films due to the varying Hf to Ti ratio A. Paskaleva, Anton J. Bauer, M. Lemberger, Journal of Applied Physics Materials ScienceElectrical EngineeringElectronic DevicesEngineeringElectronic Materials	2004	73
Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications Werner Daves, N. Behnel, Volker Häublein, Thin Solid Films Materials EngineeringMaterials ScienceHarsh Environment ApplicationsEngineeringSurface Science	2011	71
Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes Wenke Weinreich, Shariq Ahmed, Konrad Seidel, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials ScienceOxide HeterostructuresElectrical EngineeringLeakage Current AnalysisMetal–insulator–metal Capacitors	2012	68
Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films Wenke Weinreich, R. Reiche, M. Lemberger, Microelectronic Engineering Materials ScienceC–v Polarity AsymmetryMaterial AnalysisEngineeringOxide Electronics	2009	63
Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping Wenke Weinreich, L. Wilde, Johannes Müller, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringAnnealed Zro2Chemical DepositionZro2 FilmsIi-vi Semiconductor	2012	55
Hot electron transport in SiO2 probed with a scanning tunnel microscope R. Ludeke, Anton J. Bauer, E. Cartier Applied Physics Letters Hot Electron TransportEngineeringSemiconductor DeviceSemiconductorsElectronic Devices	1995	52
Reduced On Resistance in LDMOS Devices by Integrating Trench Gates Into Planar Technology Tobias Erlbacher, Anton J. Bauer, L. Frey IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2010	50
Investigation of the reliability of 4H–SiC MOS devices for high temperature applications Martin Le-Huu, H. Schmitt, Stefan Noll, Microelectronics Reliability Electrical EngineeringMos DevicesEngineeringBias Temperature InstabilityHigh Temperature Applications	2011	46

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