M. Lemberger - Concepedia

Author

M. Lemberger

Fraunhofer Institute for Integrated Systems and Device Technology

Also Known As

M Lemberger, M. LEMBERGER, M. Lemberger, Martin Lemberger

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Integrated Systems and Device Technology Schott (Germany)Friedrich-Alexander-Universität Erlangen-Nürnberg Fraunhofer Institute for Photonic Microsystems Georgi Nadjakov Institute of Solid State Physics

About

M. Lemberger is an author at Fraunhofer Institute for Integrated Systems and Device Technology specializing in materials science, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	26	1.4K
2	Applied Physics	16	23	1.3K
3	Electrical Engineering	11	12	992
4	Chemistry	4	4	77
5	Chemical Engineering	3	3	56

M. Lemberger

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Ferroelectricity in yttrium-doped hafnium oxide Johannes Müller, U. Schröder, T. S. Böscke, Journal of Applied Physics Materials ScienceOxide HeterostructuresElectrical EngineeringMultiferroicsEngineering	2011	669
Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics V. Yanev, Mathias Rommel, M. Lemberger, Applied Physics Letters EngineeringMicroscopyTuna Current MapsCurrent DensitiesSensitive Mapping Tool	2008	85
Different current conduction mechanisms through thin high-<i>k</i> HfxTiySizO films due to the varying Hf to Ti ratio A. Paskaleva, Anton J. Bauer, M. Lemberger, Journal of Applied Physics Materials ScienceElectrical EngineeringElectronic DevicesEngineeringElectronic Materials	2004	73
Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes Wenke Weinreich, Shariq Ahmed, Konrad Seidel, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials ScienceOxide HeterostructuresElectrical EngineeringLeakage Current AnalysisMetal–insulator–metal Capacitors	2012	68
Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films Wenke Weinreich, R. Reiche, M. Lemberger, Microelectronic Engineering Materials ScienceC–v Polarity AsymmetryMaterial AnalysisEngineeringOxide Electronics	2009	63
Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping Wenke Weinreich, L. Wilde, Johannes Müller, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringAnnealed Zro2Chemical DepositionZro2 FilmsIi-vi Semiconductor	2012	55
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition Johannes Müller, T. S. Böscke, U. Schröder, Microelectronic Engineering Materials ScienceEngineeringHfo2 AdditionZro2 Mim Capacitors	2009	44
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor M. Lemberger, A. Paskaleva, Stefan Zürcher, Microelectronics Reliability Materials EngineeringMaterials ScienceSingle-source Mocvd PrecursorMaterial AnalysisEngineering	2004	28
The synthesis and characterization of solid-state materials produced by high shear-hydrodynamic cavitation William R. Moser, B.J. Marshik, James K. Kingsley, Journal of materials research/Pratt's guide to venture capital sources Materials ScienceCavitationCavitating FlowEngineeringMechanical Properties	1995	28
Influence of the amorphous/crystalline phase of Zr1−xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks A. Paskaleva, M. Lemberger, Anton J. Bauer, Journal of Applied Physics EngineeringElectrode-electrolyte InterfaceAmorphous/crystalline PhaseZr1−xalxo2 High-k LayersThin Film Processing	2009	27

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