Volker Häublein

Publications

470

Citations

H-Index

1997

Active since

Affiliations

Fraunhofer Institute for Integrated Systems and Device Technology(Current)

Friedrich-Alexander-Universität Erlangen-Nürnberg

Schott (Germany)

The University of Osaka

Volker Häublein is an author at Fraunhofer Institute for Integrated Systems and Device Technology specializing in engineering, materials science, and hydrogen.

ORCID

Top concepts

EngineeringMaterial ScienceHydrogenApplied PhysicsCatalysisChemistryNanotechnologyPhotocatalysisPhotochemistryNanoelectronics

Publications per year

1997–2016

Publications

“Black” TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution

Ning Liu, Volker Häublein, Xuemei Zhou et al. · Nano Letters · 2015 · 191 citations · Full text

TiO2 Nanotubes: Nitrogen‐Ion Implantation at Low Dose Provides Noble‐Metal‐Free Photocatalytic H2‐Evolution Activity

Xuemei Zhou, Volker Häublein, Ning Liu et al. · Angewandte Chemie International Edition · 2016 · 143 citations · Full text

Engineering, Inorganic Photochemistry, Nanoheterogeneous Catalysis +17

Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications

Werner Daves, N. Behnel, Volker Häublein et al. · Thin Solid Films · 2011 · 71 citations

Materials Engineering, Materials Science, Harsh Environment Applications +9

TiO2 Nanotubes: Nitrogen‐Ion Implantation at Low Dose Provides Noble‐Metal‐Free Photocatalytic H2‐Evolution Activity

Xuemei Zhou, Volker Häublein, Ning Liu et al. · Angewandte Chemie · 2016 · 26 citations

Materials Science, Ion Implantation, Engineering +14

The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors

Thomas Mikolajick, Volker Häublein, H. Ryssel · Applied Physics A · 1997 · 24 citations

Device Modeling, Random Dopant Fluctuations, Electrical Engineering +10

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