F. Cristiano - Concepedia

Author

F. Cristiano

Centre National de la Recherche Scientifique ORCID

Also Known As

Cristiano, Filadelfo, Cristiano, Fuccio, F Cristiano, F. Cristiano, Filadelfo Cristiano, Fuccio Cristiano, Guilhem Larrieu, Guilhem Larrieu (4256374), Isoird, Karine, Monflier, Richard

299

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Laboratoire d'Analyse et d'Architecture des Systèmes Centre d’Élaboration de Matériaux et d’Études Structurales Université Fédérale de Toulouse Midi-Pyrénées University of Surrey

About

F. Cristiano is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	72	2.6K
2	Applied Physics	29	72	2.5K
3	Natural Sciences	3	3	339
4	Medicine	2	2	195
5	Social Sciences	1	1	12

F. Cristiano

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Energetics of Self-Interstitial Clusters in Si N. E. B. Cowern, Giovanni Mannino, P.A. Stolk, Physical Review Letters EngineeringSilicon On InsulatorDefect ToleranceCluster Formation EnergySilicene	1999	313
Extended defects in shallow implants A. Claverie, B. Colombeau, B. de Mauduit, Applied Physics A EngineeringMedicineDental BiomechanicsShallow ImplantsImplantable Device	2003	126
Engineering strained silicon on insulator wafers with the Smart CutTM technology B. Ghyselen, Jean‐Michel Hartmann, T. Ernst, Solid-State Electronics Insulator WafersSemiconductor TechnologyElectrical EngineeringEngineeringSilicon Debugging	2004	114
Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions Bartek Pawlak, R. Surdeanu, B. Colombeau, Applied Physics Letters EngineeringGe PreamorphizationBoron DeactivationBoron NitrideNanoelectronics	2004	104
Formation energies and relative stability of perfect and faulted dislocation loops in silicon F. Cristiano, J. Grisolia, B. Colombeau, Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorDefect ToleranceRelative Stability	2000	101
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs Viktoryia Uhnevionak, A. Burenkov, Christian Strenger, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2015	84
Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation T. Komoda, James Kelly, F. Cristiano, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationPhotoluminescenceEngineeringVisible Photoluminescence	1995	80
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon C.J. Ortiz, P. Pichler, Tim Fühner, Journal of Applied Physics EngineeringSilicon On InsulatorDefect ToleranceMean-size EvolutionIon Implantation	2004	74
Mechanisms of B deactivation control by F co-implantation N. E. B. Cowern, B. Colombeau, J. D. Benson, Applied Physics Letters Materials ScienceUltrashallow B ImplantsImplantable DeviceSignal TransductionEngineering	2005	69
Clusters formation in ultralow-energy high-dose boron-implanted silicon F. Cristiano, X. Hebras, N. Cherkashin, Applied Physics Letters Materials ScienceSemiconductorsIon ImplantationCluster ScienceSmall Cluster Defects	2003	66

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