H.F.F. Jos

Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles

N. E. B. Cowern, K.T.F. Janssen, H.F.F. Jos · Journal of Applied Physics · 1990 · 206 citations

Engineering, Materials Engineering, Materials Science +15

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Vincent Desmaris, M. Rudziński, Niklas Rorsman et al. · IEEE Transactions on Electron Devices · 2006 · 79 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD

M. Rudziński, Vincent Desmaris, Paul A. van Hal et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Design and characterization of integrated passive elements on high ohmic silicon

Elisa Valletta, Joost van Beek, Arnold J. den Dekker et al. · 2003 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16

Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates

M. Rudziński, E. Jezierska, J.L. Weyher et al. · physica status solidi (a) · 2007 · 21 citations · Full text

Engineering, Materials Engineering, Materials Science +17