Reactions of point defects and dopant atoms in silicon

Abstract

We report long-range interstitial migration of B in Si at low temperature, initiated by kick-out reactions with self-interstitials (I) created by Si implantation. At 450\ifmmode^\circ\else\textdegree\fi{}C, migration path lengths \ensuremath{\sim}100 nm are measured within a time frame of 15 min. Observations of the number and spatial distribution of displaced B atoms in relation to the distributions of I and vacancies (V) computed from ion transport theory allow us to deduce the reaction kinetics. The reactions I+${\mathrm{B}}_{\mathit{s}}$\ensuremath{\rightarrow}${\mathrm{B}}_{\mathit{i}}$, V+${\mathrm{B}}_{\mathit{i}}$\ensuremath{\rightarrow}${\mathrm{B}}_{\mathit{s}}$, and I+V\ensuremath{\rightarrow}0 are essentially diffusion limited, with capture radii of atomic dimensions.