Applied Physics Letters · 1994 · 85 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsRadiation TransportSemiconductor DevicesDefects In Electronic MaterialsDiffusion In SolidsIon ImplantationNucleationSemiconductor DefectsSilicon MaterialsDefect DiffusionDiffusion During AnnealingInterstitial DefectsInterstitial DiffusionInterstitialsSelf-interstitialsSilicon DefectsTransient Enhanced Diffusion
Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects.
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Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
A. E. Michel, W. Rausch, Paul Ronsheim et al. · Applied Physics Letters · 1987 · 211 citations
Experiments on atomic-scale mechanisms of diffusion
N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn et al. · Physical Review Letters · 1991 · 135 citations