R.J. Schreutelkamp

Pre-amorphization damage in ion-implanted silicon

R.J. Schreutelkamp, J. S. Custer, J.R. Liefting et al. · Materials Science Reports · 1991 · 135 citations

Engineering, Materials Engineering, Materials Science +14

Analysis of microelectronic materials and devices

R.J. Schreutelkamp · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1992 · 66 citations

Engineering, Materials Engineering, Materials Science +12

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

V. Raineri, R.J. Schreutelkamp, F. W. Saris et al. · Applied Physics Letters · 1991 · 52 citations

Engineering, Materials Engineering, Materials Science +12

Impact of silicidation on the excess noise behaviour of mos transistors

E.P. Vandamme, L.K.J. Vandamme, Cor Claeys et al. · Solid-State Electronics · 1995 · 48 citations

Engineering, Computer Engineering, Electrical Engineering +14

Reduction of secondary defect formation in MeV B+ ion-implanted Si (100)

W.X. Lu, Yiming Qian, Ruoming Tian et al. · Applied Physics Letters · 1989 · 36 citations

Engineering, Materials Engineering, Materials Science +17