Concepedia

V. Raineri

VR

Statistics

Publications

173

Citations

6.5K

H-Index

45

Active since

1990

Affiliations

Institute for Microelectronics and Microsystems(Current)

University of Catania

Istituto Nazionale di Fisica Nucleare, Sezione di Catania

STMicroelectronics (Italy)

University of Padua

V. Raineri is an author at Institute for Microelectronics and Microsystems specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceElectrical EngineeringSurface SciencePhysicsMicroelectronicsNanoelectronicsNanotechnologySemiconductors

Publications per year

1990–2012

173

Publications

173

Richardson’s constant in inhomogeneous silicon carbide Schottky contacts

Fabrizio Roccaforte, Francesco La Via, V. Raineri et al. · Journal of Applied Physics · 2003 · 236 citations

Semiconductors, Room Temperature, Electrical Engineering +12

Ion irradiation and defect formation in single layer graphene

Giuseppe Compagnini, Filippo Giannazzo, Sushant Sonde et al. · Carbon · 2009 · 229 citations

Materials Science, Graphene Nanomeshes, Engineering +3

Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo et al. · Journal of Applied Physics · 2007 · 177 citations

Wide-bandgap Semiconductor, Engineering, Charge Transport +17

Gettering of metals by voids in silicon

V. Raineri, P. G. Fallica, G. Percolla et al. · Journal of Applied Physics · 1995 · 177 citations

Materials Science, Materials Engineering, Ion Implantation +13

Voids in Silicon by He Implantation: From Basic to Applications

V. Raineri, Mario Saggio, E. Rimini · Journal of materials research/Pratt's guide to venture capital sources · 2000 · 150 citations

Materials Science, Ion Implantation, Engineering +9

1–5 of 173