E.P. Vandamme

Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures

E.P. Vandamme, Dominique Schreurs, G. Van Dinther · IEEE Transactions on Electron Devices · 2001 · 256 citations

Engineering, Electrical Engineering, Microelectronics +16

Critical discussion on unified 1/f noise models for MOSFETs

E.P. Vandamme, L.K.J. Vandamme · IEEE Transactions on Electron Devices · 2000 · 171 citations

Engineering, Electrical Engineering, Physics +17

Impact of MOSFET oxide breakdown on digital circuit operation and reliability

B. Kaczer, R. Degraeve, G. Groeseneken et al. · 2002 · 87 citations

Engineering, Computer Engineering, Electrical Engineering +16

Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements

Dominique Schreurs, Jan Verspecht, S. Vandenberghe et al. · IEEE Transactions on Microwave Theory and Techniques · 2002 · 79 citations

Engineering, Electrical Engineering, Microelectronics +16

Impact of silicidation on the excess noise behaviour of mos transistors

E.P. Vandamme, L.K.J. Vandamme, Cor Claeys et al. · Solid-State Electronics · 1995 · 48 citations

Engineering, Computer Engineering, Electrical Engineering +14