E.P. Vandamme

Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures

E.P. Vandamme, Dominique Schreurs, G. Van Dinther · IEEE Transactions on Electron Devices · 2001 · 254 citations

Engineering, Subtraction Procedure, Rf Behavior +19

Critical discussion on unified 1/f noise models for MOSFETs

E.P. Vandamme, L.K.J. Vandamme · IEEE Transactions on Electron Devices · 2000 · 171 citations

Device Modeling, Electrical Engineering, Engineering +13

Impact of MOSFET oxide breakdown on digital circuit operation and reliability

B. Kaczer, R. Degraeve, G. Groeseneken et al. · 2002 · 87 citations

Reliability, Hardware Security, Electrical Engineering +15

Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements

Dominique Schreurs, Jan Verspecht, S. Vandenberghe et al. · IEEE Transactions on Microwave Theory and Techniques · 2002 · 79 citations

Parameter Estimation, Engineering, Measurement +17

Impact of silicidation on the excess noise behaviour of mos transistors

E.P. Vandamme, L.K.J. Vandamme, Cor Claeys et al. · Solid-State Electronics · 1995 · 48 citations

Electrical Engineering, Engineering, Physics +9