Channeling implantation of B and P in silicon

A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark · Nuclear Instruments and Methods · 1980 · 4.7K citations

Engineering, Physics, Natural Sciences +11

Beam-solid interactions, physical phenomena

J. A. Knapp, Peter Børgesen, R. A. Zuhr · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1990 · 122 citations

Engineering, Beam Modification, Beam Optic +18

Profiles of boron implantations in silicon measured by secondary ion mass spectrometry

W. K. Hofker, H. W. Werner, D. P. Oosthoek et al. · Radiation Effects · 1973 · 35 citations

Ion Implantation, Boron Profiles, Physics +10

Deep implants by channeling implantation

R.J. Schreutelkamp, F.W. Saris, J.F.M. Westendorp et al. · Materials Science and Engineering B · 1989 · 27 citations

Tissue Engineering, Engineering, Medicine +5

Uniform doping of channeled-ion implantation

H. Nishi, Tsuguo Inada, T. Sakurai et al. · Journal of Applied Physics · 1978 · 26 citations

Electrical Engineering, Uniform Doping, Engineering +13