D. P. Oosthoek

Concentration profiles of boron implantations in amorphous and polycrystalline silicon

W. K. Hofker, D. P. Oosthoek, N. J. Koeman et al. · Radiation Effects · 1975 · 111 citations

Materials Science, Ion Implantation, Engineering +13

Influence of annealing on the concentration profiles of boron implantations in silicon

W. K. Hofker, H. W. Werner, D. P. Oosthoek et al. · Applied Physics A · 1973 · 99 citations

Materials Engineering, Materials Science, Concentration Profiles +10

Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles

W. K. Hofker, H. W. Werner, D. P. Oosthoek et al. · Applied Physics A · 1974 · 75 citations

Electrical Engineering, Ion Implantation, Engineering +11

The Checker Board Counter: A Semiconductor dE/dx Detector with Position Indication

W. K. Hofker, D. P. Oosthoek, A. M. E. Hoeberechts et al. · IEEE Transactions on Nuclear Science · 1966 · 38 citations

Engineering, Nuclear Physics, Measurement +23

Profiles of boron implantations in silicon measured by secondary ion mass spectrometry

W. K. Hofker, H. W. Werner, D. P. Oosthoek et al. · Radiation Effects · 1973 · 35 citations

Ion Implantation, Boron Profiles, Physics +10