Applied Physics A · 1973 · 99 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIon ImplantationSemiconductor DefectsSemiconductor Device MaterialsSilicon MaterialsAnnealing EffectsAnnealing Temperature EffectsBoron IncorporationConcentration ProfilesSilicon Annealing
10
CHANNELING STUDY OF BORON-IMPLANTED SILICON
J. C. North, W. M. Gibson · Applied Physics Letters · 1970 · 118 citations
THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
G. Fladda, K. Björkqvist, L. Eriksson et al. · Applied Physics Letters · 1970 · 89 citations
Diffusion of Boron into Silicon
A. D. Kurtz, Ruby Yee · Journal of Applied Physics · 1960 · 80 citations
Natural Sciences, Materials Engineering, Materials Science +17