H. W. Werner - Concepedia

Author

H. W. Werner

Philips (Netherlands)

Also Known As

H W Werner, H Werner, H. W. WERNER, H. W. Werner, H. Werner, H.W Werner, H.W. Werner, HW Werner

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

Philips (Netherlands)Philips (United States)NXP (Netherlands)Philips (Finland)

About

H. W. Werner is an author at Philips (Netherlands) specializing in engineering, chemistry, and analytical chemistry.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	26	1.3K
2	Applied Physics	15	17	897
3	Natural Sciences	14	15	1K
4	Medicine	10	10	535
5	Biochemistry	2	2	35

H. W. Werner

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Secondary ion mass spectrometry (SIMS VI) A. Benninghoven, Andreas Huber, H. W. Werner Analytica Chimica Acta Natural SciencesMedicineMass SpectrometryNative Mass SpectrometryAnalytical Chemistry	1988	211
Charging of insulators by ion bombardment and its minimization for secondary ion mass spectrometry (SIMS) measurements H. W. Werner, A. E. Morgan Journal of Applied Physics EngineeringTantalum DiaphragmsIon Mobility SpectrometryChemistryIon Process	1976	128
Theoretical and experimental aspects of secondary ion mass spectrometry H. W. Werner Vacuum Natural SciencesSpectroscopyMass SpectrometryAnalytical ChemistryExperimental Aspects	1974	123
Quantitative analysis of low alloy steels by secondary ion mass spectrometry A. E. Morgan, H. W. Werner Analytical Chemistry EngineeringMechanical EngineeringAltmetric Attention ScoreHigh Strength Low Alloy SteelChemistry	1976	116
The use of secondary ion mass spectrometry in surface analysis H. W. Werner Surface Science Chemical EngineeringEngineeringAnalytical InstrumentationNatural SciencesSpectroscopy	1975	112
A comparative study of methods for thin-film and surface analysis H. W. Werner, R. P. H. Garten Reports on Progress in Physics EngineeringMechanical EngineeringComputer-aided DesignThin Film Process TechnologySpecial Advantages	1984	102
Influence of annealing on the concentration profiles of boron implantations in silicon W. K. Hofker, H. W. Werner, D. P. Oosthoek, Applied Physics A Materials EngineeringMaterials ScienceConcentration ProfilesEngineeringPhysics	1973	99
The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon A. E. Morgan, H. A. M. de Grefte, N. Warmoltz, Applications of Surface Science Ion ImplantationEngineeringPhysicsBombardment ConditionsSecondary Ion Yields	1981	81
Test of a quantitative approach to secondary ion mass spectrometry on glass and silicate standards A. E. Morgan, H. W. Werner Analytical Chemistry Biological Mass SpectrometryAltmetric Attention ScoreIon Mobility SpectrometryChemistryAltmetrics	1977	79
Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles W. K. Hofker, H. W. Werner, D. P. Oosthoek, Applied Physics A Electrical EngineeringIon ImplantationEngineeringBoron NitridePhysics	1974	75

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