Diffusion of boron in germanium at 800–900°C

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar, +4

Journal of Applied Physics

Materials ScienceB DiffusionIon ImplantationBoron NitrideEngineering +10

Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

N. Jensen, Uwe Rau, R. M. Hausner, +4

Journal of Applied Physics

Electrical EngineeringRecombination MechanismsEngineeringOrganic Solar CellApplied Physics +8

Diffusion of ion-implanted boron in germanium

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar, +4

Journal of Applied Physics

Materials ScienceB DiffusionIon ImplantationSolid SolubilityEngineering +9

Modeling of laser-annealed polysilicon TFT characteristics

G.A. Armstrong, Suresh Uppal, S. D. Brotherton, +1

IEEE Electron Device Letters

Materials EngineeringPolysilicon Thin-film TransistorEngineeringGrain Boundary ParametersPhysics +9

Impact of aggressive fin width scaling on FinFET device characteristics

Xiaoli He, Jody Fronheiser, Pei Zhao, +16

Device ModelingElectrical EngineeringFinfet Device CharacteristicsEngineeringFin Width Scaling +8

Differentiation of Effects due to Grain and Grain Boundary Traps in Laser Annealed Poly-Si Thin Film Transistors

G.A. Armstrong, Suresh Uppal, S. D. Brotherton, +1

Japanese Journal of Applied Physics

Double Exponential DensityElectrical EngineeringThin Film TransistorsEngineeringPhysics +9

Device reliability metric for end-of-life performance optimization based on circuit level assessment

A. Kerber, P. Srinivasan, S. Cimino, +12

EngineeringComputer ArchitectureCircuit Level AssessmentSystem ReliabilityHardware Security +14

Multi-Layered Plasma-Polymerized Chips for SPR-Based Detection

Ram P. Gandhiraman, Nam Cao Hoai Le, Chandra Kumar Dixit, +9

ACS Applied Materials & Interfaces

Biofunctional MaterialNanomedicineEngineeringAdhesion LayerAcrylic Acid +12

Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor

Dayu Zhou, Uwe Schroeder, Gunther Jegert, +6

Journal of Applied Physics

Materials ScienceStress VoltageElectrical EngineeringDielectricsEngineering +13

Modeling of the Threshold Voltage in Strained $\hbox{Si/Si}_{1 - x} \hbox{Ge}_{x}/\hbox{Si}_{1 - y}\hbox{Ge}_{y}(x \geq y)$ CMOS Architectures

Parker Y. L. Tsang, Sanatan Chattopadhyay, Suresh Uppal, +4

IEEE Transactions on Electron Devices

Device ModelingX \Geq YElectrical EngineeringDual Channel ArchitectureEngineering +10