Suresh Uppal

Diffusion of boron in germanium at 800–900°C

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar et al. · Journal of Applied Physics · 2004 · 120 citations

Materials Science, B Diffusion, Ion Implantation +12

Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

N. Jensen, Uwe Rau, R. M. Hausner et al. · Journal of Applied Physics · 2000 · 118 citations

Electrical Engineering, Recombination Mechanisms, Engineering +10

Diffusion of ion-implanted boron in germanium

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar et al. · Journal of Applied Physics · 2001 · 111 citations

Materials Science, B Diffusion, Ion Implantation +11

Modeling of laser-annealed polysilicon TFT characteristics

G.A. Armstrong, Suresh Uppal, S. D. Brotherton et al. · IEEE Electron Device Letters · 1997 · 65 citations

Materials Engineering, Polysilicon Thin-film Transistor, Engineering +11

Impact of aggressive fin width scaling on FinFET device characteristics

Xiaoli He, Jody Fronheiser, Pei Zhao et al. · 2017 · 53 citations

Device Modeling, Electrical Engineering, Finfet Device Characteristics +10