F. C. Unterwald

Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation

D. J. Eaglesham, F. C. Unterwald, D. C. Jacobson · Physical Review Letters · 1993 · 221 citations

Materials Science, Materials Engineering, Sb Impurities +15

Direct imaging of a novel silicon surface reconstruction

J. M. Gibson, Michael L. McDonald, F. C. Unterwald · Physical Review Letters · 1985 · 139 citations

Engineering, Microscopy, Direct Imaging +20

Electrical transport properties of CoSi2 and NiSi2 thin films

J. C. Hensel, R. T. Tung, J. M. Poate et al. · Applied Physics Letters · 1984 · 126 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +13

Interpretation of dislocation propagation velocities in strained Ge<i>x</i>Si1−<i>x</i>/Si(100) heterostructures by the diffusive kink pair model

R. Hull, J. C. Bean, D. Bahnck et al. · Journal of Applied Physics · 1991 · 109 citations

Materials Science, Diffusive Double-kink, Engineering +14

Doping of Si thin films by low-temperature molecular beam epitaxy

H.-J. Gossmann, F. C. Unterwald, H. S. Luftman · Journal of Applied Physics · 1993 · 98 citations

Engineering, Junction Depths, Optoelectronic Devices +17