H. S. Luftman

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Beryllium δ doping of GaAs grown by molecular beam epitaxy

E. F. Schubert, J. M. Kuo, R. F. Kopf et al. · Journal of Applied Physics · 1990 · 129 citations

Engineering, Dopants Occurs, Beryllium δ Doping +16

Impact of Microstructure on MoS₂ Oxidation and Friction

John F. Curry, Mark Wilson, H. S. Luftman et al. · ACS Applied Materials & Interfaces · 2017 · 120 citations · Full text

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Applied Physics Letters · 1995 · 119 citations

Materials Science, Boron Clustering, Engineering +12

Activation of ultrathin SrTiO₃ with subsurface SrRuO₃ for the oxygen evolution reaction

Andrew R. Akbashev, Liang Zhang, J. Tyler Mefford et al. · Energy & Environmental Science · 2018 · 111 citations · Full text

Oxide Heterostructures, Inorganic Chemistry, Materials Science +14