J. M. Kuo

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Dual-material gate (DMG) field effect transistor

Wei Long, Haijiang Ou, J. M. Kuo et al. · IEEE Transactions on Electron Devices · 1999 · 491 citations

Device Modeling, Generic New Type, Electrical Engineering +9

Dynamics of exciton formation and relaxation in GaAs quantum wells

T. C. Damen, Jagdeep Shah, D. Y. Oberli et al. · Physical review. B, Condensed matter · 1990 · 269 citations

Engineering, Excitation Energy Transfer, Exciton Luminescence +20

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

B. F. Levine, A. Zussman, Sarath D. Gunapala et al. · Journal of Applied Physics · 1992 · 186 citations

Quantum Science, Photonics, Quantum Photonics +13

Normal incidence hole intersubband absorption long wavelength GaAs/Al<i>x</i>Ga1−<i>x</i>As quantum well infrared photodetectors

B. F. Levine, Sarath D. Gunapala, J. M. Kuo et al. · Applied Physics Letters · 1991 · 161 citations

Semiconductors, Photonics, Photoluminescence +14