S. T. Picraux

Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

J. W. Mayer, L. Eriksson, S. T. Picraux et al. · Canadian Journal of Physics · 1968 · 277 citations

Engineering, Germanium Lattice, Silicon On Insulator +16

Ion beams in silicon processing and characterization

Eric Chason, S. T. Picraux, J. M. Poate et al. · Journal of Applied Physics · 1997 · 271 citations

Materials Engineering, Electrical Engineering, Ion Implantation +12

Lotus Effect Amplifies Light-Induced Contact Angle Switching

Rohit Rosario, Devens Gust, Antonio A. Garcı́a et al. · The Journal of Physical Chemistry B · 2004 · 259 citations

Engineering, Wetting, Super-hydrophobic Surface +17

Role of integrated lateral stress in surface deformation of He-implanted surfaces

E.P. EerNisse, S. T. Picraux · Journal of Applied Physics · 1977 · 197 citations

Engineering, Mechanical Engineering, Residual Stress +17

Defect trapping of ion-implanted deuterium in Fe

S. M. Myers, S. T. Picraux, R.E. Stoltz · Journal of Applied Physics · 1979 · 186 citations

Ion Implantation, Engineering, Nuclear Physics +13