S. T. Picraux

Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

J. W. Mayer, L. Eriksson, S. T. Picraux et al. · Canadian Journal of Physics · 1968 · 277 citations

Natural Sciences, Materials Science, Physics +17

Ion beams in silicon processing and characterization

Eric Chason, S. T. Picraux, J. M. Poate et al. · Journal of Applied Physics · 1997 · 276 citations

Engineering, Materials Engineering, Materials Science +15

Lotus Effect Amplifies Light-Induced Contact Angle Switching

Rohit Rosario, Devens Gust, Antonio A. Garcı́a et al. · The Journal of Physical Chemistry B · 2004 · 259 citations

Natural Sciences, Materials Engineering, Materials Science +17

Role of integrated lateral stress in surface deformation of He-implanted surfaces

E.P. EerNisse, S. T. Picraux · Journal of Applied Physics · 1977 · 197 citations

Natural Sciences, Materials Engineering, Materials Science +13

Defect trapping of ion-implanted deuterium in Fe

S. M. Myers, S. T. Picraux, R.E. Stoltz · Journal of Applied Physics · 1979 · 187 citations

Natural Sciences, Materials Science, Physics +14