L. Eriksson

Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

J. W. Mayer, L. Eriksson, S. T. Picraux et al. · Canadian Journal of Physics · 1968 · 277 citations

Natural Sciences, Materials Science, Physics +17

ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

John Davies, J. Denhartog, L. Eriksson et al. · Canadian Journal of Physics · 1967 · 274 citations

Engineering, Materials Engineering, Materials Science +17

Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique

L. Eriksson, John Davies, Nils Gunnar Johansson et al. · Journal of Applied Physics · 1969 · 170 citations

Engineering, Materials Engineering, Materials Science +17

Range Measurements in Oriented Tungsten Single Crystals (0.1-1.0 MeV). I. Electronic and Nuclear Stopping Powers

L. Eriksson, John Davies, P. Jespersgaard · Physical Review · 1967 · 136 citations

Natural Sciences, Materials Science, Electronic Materials +6

Channeling Studies in Diamond-Type Lattices

S. T. Picraux, John Davies, L. Eriksson et al. · Physical Review · 1969 · 126 citations

Natural Sciences, Materials Science, Physics +9