B. R. Appleton - Concepedia

Author

B. R. Appleton

Also Known As

Appleton, B. R., Appleton, B.R., Appleton, B.R.; Ball, J.B.; Alonso, J.R. [Oak Ridge National Lab., TN (United States)]; Gough, R.A. [Lawrence Berkeley National Lab., CA (United States)]; Weng, W.T. [Brookhaven National Lab., Upton, NY (United States)]; Jason, A. [Los Alamos National Lab., NM (United States)]; The National Spallation Neutron Source Collaboration, Appleton, B.R.; Narayan, J.; White, C.W.; Williams, J.S.; Short, K.T., B Appleton, B R Appleton, B. Appleton, B. R. APPLETON, B. R. Appleton, B.R. APPLETON

228

Publications

5.6K

Citations

H-Index

Concepts

All Affiliations

Oak Ridge National Laboratory University of Florida

About

B. R. Appleton is an author at Oak Ridge National Laboratory specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	75	4.7K
2	Applied Physics	36	69	4.4K
3	Natural Sciences	15	16	953
4	Chemical Engineering	5	5	170
5	Biomolecular Engineering	1	1	44

B. R. Appleton

Publications

5.2K

Citations

H-Index

Page 1

	Year	Citations
Laser and Electron Beam Interactions with Solids N. Bloembergen, B. R. Appleton, G. K. Celler MRS Bulletin Free-electron LasersEngineeringPhysicsRelativistic Laser-matter InteractionApplied Physics	1982	588
Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon C. W. White, S. R. Wilson, B. R. Appleton, Journal of Applied Physics Optical MaterialsEngineeringSubstitutional AlloysLaser ApplicationsLaser Material	1980	353
Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single Crystals B. R. Appleton, C. Erginsoy, W. M. Gibson Physical Review EngineeringNuclear PhysicsIon Beam InstrumentationSilicon On InsulatorSemiconductor Device	1967	303
Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes Sefaattin Tongay, Maxime G. Lemaitre, Xiaochang Miao, Physical Review X	2012	237
Profiling hydrogen in materials using ion beams J. F. Ziegler, Chih-Wei Wu, Peter Williams, Nuclear Instruments and Methods Materials ScienceEngineeringSpectroscopyIon BeamsIon Beam	1978	203
Stable hole doping of graphene for low electrical resistance and high optical transparency Sefaattin Tongay, Kara Berke, Maxime G. Lemaitre, Nanotechnology P DopingOptical MaterialsEngineeringStable Hole DopingGraphene Nanomeshes	2011	186
Ion implantation damage and annealing in germanium O. W. Holland, B. R. Appleton, J. Narayan Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringIon ImplantationEngineering	1983	132
Graphene/GaN Schottky diodes: Stability at elevated temperatures Sefaattin Tongay, Maxime G. Lemaitre, Todd Schumann, Applied Physics Letters Materials ScienceGraphene NanomeshesElectrical EngineeringGraphene Quantum DotEngineering	2011	121
Characterization of damage in ion implanted Ge B. R. Appleton, O. W. Holland, J. Narayan, Applied Physics Letters Materials ScienceRoom TemperatureElectrical EngineeringIon ImplantationEngineering	1982	120
Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping Sefaattin Tongay, Todd Schumann, Xiaochang Miao, Carbon Graphene NanomeshesElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2011	111

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