Maxime G. Lemaitre

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Sefaattin Tongay, Maxime G. Lemaitre, Xiaochang Miao et al. · Physical Review X · 2012 · 237 citations · Full text

Natural Sciences, Materials Science, Physics +17

Stable hole doping of graphene for low electrical resistance and high optical transparency

Sefaattin Tongay, Kara Berke, Maxime G. Lemaitre et al. · Nanotechnology · 2011 · 189 citations

Natural Sciences, Materials Engineering, Materials Science +17

Transparent flexible organic thin-film transistors that use printed single-walled carbon nanotube electrodes

Qing Cao, Zhengtao Zhu, Maxime G. Lemaitre et al. · Applied Physics Letters · 2006 · 150 citations

Engineering, Materials Engineering, Materials Science +17

Graphene/GaN Schottky diodes: Stability at elevated temperatures

Sefaattin Tongay, Maxime G. Lemaitre, Todd Schumann et al. · Applied Physics Letters · 2011 · 124 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors

Maxime G. Lemaitre, Evan P. Donoghue, Mitchell A. McCarthy et al. · ACS Nano · 2012 · 117 citations

Engineering, Electrical Engineering, Materials Science +17