Ravi Kumar Chanana

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 628 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +9

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Ravi Kumar Chanana, K. McDonald, Massimiliano Di Ventra et al. · Applied Physics Letters · 2000 · 104 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Gilyong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 61 citations

Materials Science, Semiconductors, Electrical Engineering +13

Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler–Nordheim tunneling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections

Ravi Kumar Chanana · Journal of Applied Physics · 2011 · 49 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Gil Yong Chung, John R. Williams, C. C. Tin et al. · Applied Surface Science · 2001 · 34 citations

Electrical Engineering, Engineering, Nitrogen Passivation +6