Gilyong Chung

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Chao‐Yang Lu, James A. Cooper, Takashi Tsuji et al. · IEEE Transactions on Electron Devices · 2003 · 150 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Gilyong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 61 citations

Engineering, Materials Engineering, Materials Science +17

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

David C. Sheridan, Gilyong Chung, S. Clark et al. · IEEE Transactions on Nuclear Science · 2001 · 44 citations

Engineering, Electrical Engineering, Radiation Measurement +16

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Jianqiu Guo, Yu Yang, Balaji Raghothamachar et al. · Journal of Electronic Materials · 2016 · 37 citations

Engineering, Materials Engineering, Materials Science +14

The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

Tianbing Chen, Zhiyun Luo, John D. Cressler et al. · Solid-State Electronics · 2002 · 32 citations

Engineering, Materials Engineering, Materials Science +16