Transition layers at the SiO2∕SiC interface

Abstract

The electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2∕SiC interface during processing. We analyzed the structure and chemistry of this interface for the thermally grown SiO2∕4H-SiC heterostructure using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, and spatially resolved electron energy-loss spectroscopy. The analyses revealed the presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to the formation of a ternary Si–C–O phase during thermal oxidation.