Aivars J. Lelis

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Aivars J. Lelis, Ron Green, Daniel B. Habersat et al. · IEEE Transactions on Electron Devices · 2014 · 440 citations

Engineering, Basic Mechanisms, Power Electronics +21

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Aivars J. Lelis, Daniel B. Habersat, Ronald Green et al. · IEEE Transactions on Electron Devices · 2008 · 311 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

The nature of the trapped hole annealing process

Aivars J. Lelis, Timothy R. Oldham, H. E. Boesch et al. · IEEE Transactions on Nuclear Science · 1989 · 309 citations

Engineering, Post-irradiation Positive-bias Annealing, Silicon On Insulator +19

Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing

Timothy R. Oldham, Aivars J. Lelis, F. B. McLean · IEEE Transactions on Nuclear Science · 1986 · 270 citations

Engineering, Defect Tolerance, Tunneling Microscopy +16

Reversibility of trapped hole annealing

Aivars J. Lelis, H. E. Boesch, Timothy R. Oldham et al. · IEEE Transactions on Nuclear Science · 1988 · 191 citations

Simple Oxygen Vacancy, Engineering, Integrated Circuits +19