Aivars J. Lelis

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Aivars J. Lelis, Ron Green, Daniel B. Habersat et al. · IEEE Transactions on Electron Devices · 2014 · 450 citations

Engineering, Electrical Engineering, Materials Science +17

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Aivars J. Lelis, Daniel B. Habersat, Ronald Green et al. · IEEE Transactions on Electron Devices · 2008 · 314 citations

Engineering, Electrical Engineering, Materials Science +17

The nature of the trapped hole annealing process

Aivars J. Lelis, Timothy R. Oldham, H. E. Boesch et al. · IEEE Transactions on Nuclear Science · 1989 · 310 citations

Engineering, Materials Engineering, Materials Science +17

Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing

Timothy R. Oldham, Aivars J. Lelis, F. B. McLean · IEEE Transactions on Nuclear Science · 1986 · 270 citations

Engineering, Electrical Engineering, Materials Science +17

Reversibility of trapped hole annealing

Aivars J. Lelis, H. E. Boesch, Timothy R. Oldham et al. · IEEE Transactions on Nuclear Science · 1988 · 192 citations

Engineering, Electrical Engineering, Materials Science +17