H. E. Boesch

The nature of the trapped hole annealing process

Aivars J. Lelis, Timothy R. Oldham, H. E. Boesch et al. · IEEE Transactions on Nuclear Science · 1989 · 310 citations

Engineering, Materials Engineering, Materials Science +17

The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices

J.M. Benedetto, H. E. Boesch · IEEE Transactions on Nuclear Science · 1986 · 204 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Two-stage process for buildup of radiation-induced interface states

P.S. Winokur, H. E. Boesch, J.M. McGarrity et al. · Journal of Applied Physics · 1979 · 197 citations

Engineering, Electrical Engineering, Materials Science +17

Reversibility of trapped hole annealing

Aivars J. Lelis, H. E. Boesch, Timothy R. Oldham et al. · IEEE Transactions on Nuclear Science · 1988 · 192 citations

Engineering, Electrical Engineering, Materials Science +17

Hole Removal in Thin-Gate MOSFETs by Tunneling

J.M. Benedetto, H. E. Boesch, F. B. McLean et al. · IEEE Transactions on Nuclear Science · 1985 · 159 citations

Engineering, Electrical Engineering, Materials Science +15