IEEE Transactions on Nuclear Science · 1986 · 204 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsRadiation Damage In MaterialsRadiation HardeningSemiconductor ReliabilityConductionFractional ChargeGate Oxide DegradationMetal-oxide-semiconductor Field-effect Transistor DosimetryRadiation Damage EffectsRadiation EffectsThreshold VoltageThreshold Voltage Extraction
This paper presents a conduction current technique to separate the effects of fractional charge yield and dose enhancement in metal-oxide semiconductor (MOS) devices in a 1O-keV x-ray environment. The results of the conduction current measurements, together with the concept of charge generation as the damage-producing agent, are used to correlate the threshold-voltage shifts in gate- and field-oxide MOS field-effect transistors irradiated with 60Co and a 10-keV x-ray machine. A straightforward procedure for calculating the equal-damage dose equivalence between the 10-keV x-ray and 60Co sources is also presented.
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Electron−hole pair creation energy in SiO2
G. A. Ausman, F. B. McLean · Applied Physics Letters · 1975 · 172 citations