J.M. Benedetto

Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

Scott A. Mathews, R. Ramesh, T. Venkatesan et al. · Science · 1997 · 601 citations

Radiation effects and hardening of MOS technology: devices and circuits

H.L. Hughes, J.M. Benedetto · IEEE Transactions on Nuclear Science · 2003 · 313 citations

Engineering, Radiation Effect, Radiation Exposure +17

The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices

J.M. Benedetto, H. E. Boesch · IEEE Transactions on Nuclear Science · 1986 · 203 citations · Full text

X-ray Spectroscopy, Engineering, Semiconductor Device +16

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

Balaji Narasimham, B. L. Bhuva, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2007 · 170 citations

Engineering, Vlsi Design, Nuclear Physics +21

Hole Removal in Thin-Gate MOSFETs by Tunneling

J.M. Benedetto, H. E. Boesch, F. B. McLean et al. · IEEE Transactions on Nuclear Science · 1985 · 155 citations

Electrical Engineering, Engineering, Thin-oxide Mosfets +12