J.M. Benedetto - Concepedia

Author

J.M. Benedetto

Microelectronics Research Development (United States)

Also Known As

J. Benedetto, J. M. Benedetto, J.M. Benedetto, Jimena Benedetto, Joseph Benedetto, Joseph M. Benedetto

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

Microelectronics Research Development (United States)University of Colorado Colorado Springs DEVCOM Army Research Laboratory Adelphi Laboratory Center Naval Sea Systems Command

About

J.M. Benedetto is an author at Microelectronics Research Development (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	39	2.7K
2	Medicine	3	3	37
3	Health Sciences	2	2	56
4	Natural Sciences	2	2	303
5	Education	1	1	127

J.M. Benedetto

Publications

3.3K

Citations

H-Index

Page 1

	Year	Citations
Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures Scott A. Mathews, R. Ramesh, T. Venkatesan, Science	1997	601
Radiation effects and hardening of MOS technology: devices and circuits H.L. Hughes, J.M. Benedetto IEEE Transactions on Nuclear Science EngineeringRadiation EffectRadiation ExposureSemiconductor DeviceRadiation Protection	2003	313
The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices J.M. Benedetto, H. E. Boesch IEEE Transactions on Nuclear Science X-ray SpectroscopyEngineeringSemiconductor DeviceMos DevicesNanoelectronics	1986	203
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies Balaji Narasimham, B. L. Bhuva, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science EngineeringVlsi DesignNuclear PhysicsIon Beam InstrumentationIntegrated Circuits	2007	170
Hole Removal in Thin-Gate MOSFETs by Tunneling J.M. Benedetto, H. E. Boesch, F. B. McLean, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringThin-oxide MosfetsPhysicsTunneling Microscopy	1985	155
Single event transient pulse widths in digital microcircuits Matthew J. Gadlage, Ronald D. Schrimpf, J.M. Benedetto, IEEE Transactions on Nuclear Science EngineeringVlsi DesignComputer ArchitectureTransient Error RateHardware Security	2004	146
Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose H. E. Boesch, F. B. McLean, J.M. Benedetto, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringPhysicsNanoelectronics	1986	142
Digital Single Event Transient Trends With Technology Node Scaling J.M. Benedetto, Paul Eaton, D.G. Mavis, IEEE Transactions on Nuclear Science Event-driven ArchitectureElectrical EngineeringEngineeringVlsi DesignTechnology Scaling	2006	136
Heavy ion-induced digital single-event transients in deep submicron Processes J.M. Benedetto, Paul Eaton, Keith Avery, IEEE Transactions on Nuclear Science EngineeringVlsi DesignComputer ArchitectureDeep Submicron ProcessesCombinational-logic Set Rate	2004	133
Single event transient pulsewidth measurements using a variable temporal latch technique Paul Eaton, J.M. Benedetto, D.G. Mavis, IEEE Transactions on Nuclear Science EngineeringMeasurementEducationClock SynchronizationNew Test Structure	2004	127

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