IEEE Transactions on Nuclear Science · 2003 · 319 citations · 338 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsRadiation Damage In MaterialsRadiation HardeningRadiation ResistanceSemiconductor ReliabilityElectrical PropertiesElectrical Properties AnalysisOxide ChargeRadiation EffectsRadiation-hard DevicesRadiation-hard ElectronicsRadiation-hardened Integrated CircuitsRadiation-induced Charge Trapping
Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation.
338
The electronic structure at the atomic scale of ultrathin gate oxides
David A. Muller, T. Sorsch, S. Moccio et al. · Nature · 1999 · 961 citations