Daniel B. Habersat - Concepedia

Author

Daniel B. Habersat

DEVCOM Army Research Laboratory ORCID

Also Known As

D. Habersat, D.B. Habersat, Dan Habersat, Daniel B Habersat, Daniel B. Habersat, Daniel Habersat

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

DEVCOM Army Research Laboratory University of Maryland, College Park Tel Aviv University National Institute of Standards and Technology United States Army Combat Capabilities Development Command

About

Daniel B. Habersat is an author at DEVCOM Army Research Laboratory specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	39	2.1K
2	Electrical Engineering	20	38	2.1K
3	Applied Physics	19	30	1.8K
4	Materials Engineering	2	2	461
5	Computer Engineering	1	1	10

Daniel B. Habersat

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs Aivars J. Lelis, Ron Green, Daniel B. Habersat, IEEE Transactions on Electron Devices EngineeringBasic MechanismsPower ElectronicsThreshold-voltage InstabilityReliability Engineering	2014	440
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements Aivars J. Lelis, Daniel B. Habersat, Ronald Green, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2008	311
A Physical Model of High Temperature 4H-SiC MOSFETs Siddharth Potbhare, Neil Goldsman, Aivars J. Lelis, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysical Model	2008	182
Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques Moshe Gurfinkel, Hao Xiong, Kin P. Cheung, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage Current	2008	124
Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility Trinity Biggerstaff, C. L. Reynolds, Tsvetanka Zheleva, Applied Physics Letters Electrical EngineeringMaterial AnalysisEngineeringPhysicsLayered Material	2009	91
Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs Ron Green, Aivars J. Lelis, Daniel B. Habersat Japanese Journal of Applied Physics Electrical EngineeringEngineeringHigh Voltage EngineeringPower DeviceBias Temperature Instability	2016	79
Application of reliability test standards to SiC Power MOSFETs Ronald Green, Aivars J. Lelis, Daniel B. Habersat ReliabilityElectrical EngineeringReliability EngineeringEngineeringDevice Stress	2011	73
SiC MOSFET threshold-stability issues Aivars J. Lelis, Ronald Green, Daniel B. Habersat Materials Science in Semiconductor Processing Electrical EngineeringEngineeringPower DeviceBias Temperature InstabilityPower Semiconductor Device	2017	70
Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs Aivars J. Lelis, Daniel B. Habersat, Gabriel P. López, Materials science forum Semiconductor TechnologySic Vt InstabilityElectrical EngineeringSemiconductor DeviceEngineering	2006	56
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs Aivars J. Lelis, Daniel B. Habersat, Ronald Green, Materials science forum Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringTrap Charging	2012	54

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