Daniel B. Habersat

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

Aivars J. Lelis, Ron Green, Daniel B. Habersat et al. · IEEE Transactions on Electron Devices · 2014 · 440 citations

Engineering, Basic Mechanisms, Power Electronics +21

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Aivars J. Lelis, Daniel B. Habersat, Ronald Green et al. · IEEE Transactions on Electron Devices · 2008 · 311 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

A Physical Model of High Temperature 4H-SiC MOSFETs

Siddharth Potbhare, Neil Goldsman, Aivars J. Lelis et al. · IEEE Transactions on Electron Devices · 2008 · 182 citations

Device Modeling, Electrical Engineering, Semiconductor Device +12

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques

Moshe Gurfinkel, Hao Xiong, Kin P. Cheung et al. · IEEE Transactions on Electron Devices · 2008 · 124 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

Trinity Biggerstaff, C. L. Reynolds, Tsvetanka Zheleva et al. · Applied Physics Letters · 2009 · 91 citations

Electrical Engineering, Material Analysis, Engineering +15