A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes, +43

Low-power ElectronicsElectrical EngineeringMillimeter Wave TechnologyEngineeringVlsi Design +13

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau, +25

Solid-State Electronics

3D Ic ArchitectureElectrical EngineeringEngineeringVlsi DesignThin Box +10

A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications

S. Crémer, Nathalie Vulliet, Thierry Pinguet, +40

PhotonicsSoi WafersOptical InterconnectsEngineeringIntegrated Photonics +13

Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below

C. Fenouillet-Béranger, P. Perreau, S. Denorme, +29

Solid-State Electronics

Electrical EngineeringSemiconductor DeviceEngineeringUltra-thin BoxAdvanced Packaging (Semiconductors) +10

Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm² 6T-SRAM bitcell

C. Fenouillet-Béranger, J. Todeschini, Jean-Christophe Le-Denmat, +57

Pmos TransistorsSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics +11

50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

S. Monfray, T. Skotnicki, Y. Morand, +14

Electrical EngineeringEngineeringRf SemiconductorBulk DevicesNanoelectronics +11

Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (∼2Ω/□) without metal CMP nor etching

B. Tavel, T. Skotnicki, G. Parès, +6

Materials ScienceCosi/sub 2/Electrical EngineeringEngineeringVlsi Design +12

Highly performant double gate MOSFET realized with SON process

S. Harrison, P. Coronel, F. Leverd, +21

Electrical EngineeringEngineeringSon ProcessHigh Ion/ioff TradeNanoelectronics +8

Emerging silicon-on-nothing (SON) devices technology

S. Monfray, T. Skotnicki, C. Fenouillet-Béranger, +15

Solid-State Electronics

Electrical EngineeringEngineeringDevices TechnologyDevice IntegrationMicrofabrication +3

First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance

S. Monfray, T. Skotnicki, Y. Morand, +13

Device ModelingHigh Electrical PerformanceElectrical EngineeringPhysical Design (Electronics)Engineering +13